C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/08 (2006.01) C23C 16/455 (2006.01) C30B 25/14 (2006.01) C23C 16/44 (2006.01)
Patent
CA 2329568
The invention relates to an apparatus for growing thin films onto the surface of a substrate (4) by exposing the substrate (4) to alternately repeated surface reactions of vapor-phase reactants, the apparatus comprising a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants used in said thin film growth process, and outfeed means connected to the reaction space for discharging excess reactants and gaseous reaction products from the reaction space, at least one substrate (4) adapted into the reaction space, and a second surface which is adapted into the reaction space in a disposition opposed to the surface of said substrate (4) on which the thin film is to be grown and which is disposed at a distance from said substrate surface sup- porting said thin-film growth process. The thin-film growth supporting surface of said substrate (4) and the other surface disposed opposing the same are arranged into said reaction chamber so as to subtend an angle (11) opening in the flow direction of the reactants in relation to said opposed surfaces, whereby the distance between said opposed surfaces at the infeed end of reactants is smaller than at the gas outfeed end.
Asm International N.v.
Asm Microchemistry Oy
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
LandOfFree
Apparatus for growing thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for growing thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for growing thin films will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1362928