H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/192, 356/194
H01L 21/68 (2006.01) C30B 23/02 (2006.01) C30B 35/00 (2006.01) H01L 21/203 (2006.01)
Patent
CA 1207470
- 1 - Abstract: An apparatus for molecular beam epitaxy is constructed so that a substrate is introduced into a vacuum vessel with the substrate surface for epitaxial growth facing downwards. The substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth while the substrate surface is maintained facing downwards and without directly touching the substrate surface. The result is less surface contamination and a higher rate of production of successful products.
455995
Kato Shigeo
Matsumura Yasuhide
Mizumoto Muneo
Okuno Sumio
Sato Kazuo
Hitachi Ltd.
Kirby Eades Gale Baker
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