C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 19/06 (2006.01) C30B 11/00 (2006.01) C30B 11/08 (2006.01)
Patent
CA 1212019
Abstract of the disclosure In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the tempera- ture difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.
426063
Marks & Clerk
Zaidan Hojin Handotai Kenkyu Shinkokai
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