C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 19/06 (2006.01) C30B 19/08 (2006.01) H01L 21/208 (2006.01)
Patent
CA 1212017
Abstract of the disclosure A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature and on a mass production scale without deranging the control of the growth temperature applied externally of the growth apparatus and with the application of only a small heating power and only a small cooling power, by enhancing the thermal exchange efficiency through the provision of heating means, via an insulator, for the melt-containing reservoir provided on the growth boat housed within a quartz reactor and by the provision of cooling means at the bottom of the boat within the reactor.
422563
Nishizawa Jun-Ichi
Okuno Yasuo
Marks & Clerk
Zaidan Hojin Handotai Kenkyu Shinkokai
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