Apparatus for producing compound semiconductor

Details Apparatus for producing compound semiconductor Apparatus for producing compound semiconductor

C - Chemistry, Metallurgy

30

B

148/2.1

C30B 25/14 (2006.01) C23C 16/44 (2006.01) C23C 16/448 (2006.01) C23C 16/458 (2006.01) C23C 16/52 (2006.01)

Patent

CA 1325160

TITLE OF THE INVENTION APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR ABSTRACT In apparatus for producing compound semiconductor by applying vaporized organometal compound onto a substrate (15) carried by a susceptor (16), pressure of organometal compound gas is detected by a pressure sensor (1) at an outlet side of a bubbler (18) which vaporizes starting organometal compound for effecting feedback control. The pressure information is used to control flow rate of carrier gas (10) fed to the bubbler (18). The feedback controlled organometal compound gas (11) is fed via a mass flow controller (3B) to a reaction tube (14) in which the susceptor (16) is provided. An upper surface (43) of the susceptor (16) is inclined by an angle which is less than 45 degrees with respect to horizontal plane including axis of gas flow applied to the substrate (15) within the horizontal reaction tube (14), while the susceptor (16) is rotated about its center axis perpendicular to the upper surface (43) thereof. Feedback control may be effected by detecting the pressure of an exhaust gas from the reaction tube.

579543

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