C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C23C 16/27 (2006.01) C23C 16/458 (2006.01) C23C 16/513 (2006.01) C30B 25/10 (2006.01)
Patent
CA 2062005
RD-20,790 IMPROVED APPARATUS FOR PRODUCING DIAMONDS BY CHEMICAL VAPOR DEPOSITION AND ARTICLES PRODUCED THEREFROM An improved method and apparatus are disclosed for producing large area diamond depositions. A mixture of a carbon compound such as methane, hydrogen and argon is introduced into a DC arc plasma torch to form a plasma jet. The plasma jet is directed and trapped into a partially enclosed chemical vapor deposition zone confined within a reaction chamber of a CVD process. The chemical vapor deposition zone is formed by walls wherein at least one such wall is a rotating substrate cooled to a set temperature. The plasma jet containing radicalized hydrogen and a carbon compound is impinged on the rotating substrate to produce large area diamond layer.
Company General Electric
Craig Wilson And Company
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