Apparatus for producing gallium arsenide single crystal and...

Details Apparatus for producing gallium arsenide single crystal and... Apparatus for producing gallium arsenide single crystal and...

C - Chemistry, Metallurgy

30

B

148/1.4

C30B 15/14 (2006.01)

Patent

CA 1254818

SO-2-36880M/AO/84. ABSTRACT OF THE DISCLOSURE An apparatus for producing gallium arsenide single crystal and a high quality gallium arsenide single crystal produced by said apparatus. The apparatus is improved from that of the Liquid Encapsulated Czochralski method including a chamber enclosing a susceptor support ing a crucible for a melt. In the apparatus, the melt is produced by synthesizing a solid solution of GaAs at high temperature and pressure from elementary gallium, elementary arsenic, and a liquid encapsulant in a crucible in the presence or absence of elementary boron, antimony or indium as an impurity, the number of moles of arsenic being larger than that of gallium and melting said solid solution. A vertically extending shaft is mounted for rotatable and vertical movement to suspend a seed crystal above the melt and withdraw a crystal therefrom. separate heaters are provided for the crucible and the crystal extending above the melt. Radiation/convenction shielding tubes and plates prevent convection and radiation heat losses and localized cooling of the single crystal as it is drawn from the melt.

468860

Affiliated with

Also associated with

Rating

Apparatus for producing gallium arsenide single crystal and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for producing gallium arsenide single crystal and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for producing gallium arsenide single crystal and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1335995