C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
32/24
C23C 16/26 (2006.01) C23C 16/46 (2006.01)
Patent
CA 2014922
RD-18331 APPARATUS FOR SYNTHETIC DIAMOND DEPOSITION INCLUDING CURVED FILAMENTS AND SUBSTRATE COOLING MEANS Abstract Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are prestressed to curve in a single plane parallel to the substrates, to allow for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two heat sinks to maintain substrate temperature in the range of 900-1000°C, for optimum rate of diamond deposition .
Anthony Thomas R.
Devries Robert C.
Engler Richard A.
Ettinger Robert H.
Fleischer James F.
Company General Electric
Craig Wilson And Company
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