Apparatus including resonant-tunneling device having...

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H - Electricity

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H01L 27/06 (2006.01) G11C 11/56 (2006.01) H01L 29/76 (2006.01) H01L 29/88 (2006.01) H03B 19/16 (2006.01)

Patent

CA 1284234

APPARATUS INCLUDING RESONANT-TUNNELING DEVICE HAVING MULTIPLE-PEAK CURRENT-VOLTAGE CHARACTERISTICS Abstract A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.

570741

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