G - Physics – 01 – K
Patent
G - Physics
01
K
G01K 13/00 (2006.01) G01B 11/30 (2006.01) G01K 11/00 (2006.01) G01K 11/12 (2006.01) H01L 21/66 (2006.01) G01N 21/55 (2006.01)
Patent
CA 2136886
A sensor for measuring semiconductor wafer temperature in semiconductor processing equipment, comprising a first laser to provide a first laser beam at a first wavelength and a second laser to provide a second laser beam at a second wavelength. The sensor also includes laser driver and oscillator to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer, and detector module to measure the change in specular reflectance of the wafer resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry to determine rms surface roughness of wafer at a known reference temperature from the change in reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer from the change in specular reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams while wafer is at an unknown temperature and the surface roughness of the wafer at the known temperature.
Kirby Eades Gale Baker
Moslehi Mehrdad M.
Texas Instruments Incorporated
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