Arc evaporation source and film forming method using the same

C - Chemistry – Metallurgy – 23 – C

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Details

C23C 14/32 (2006.01) C23C 14/24 (2006.01)

Patent

CA 2758137

Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet (3), which is disposed such that the outer circumferential magnet surrounds the outer circumference of a target (2) and that the magnetization direction thereof is in the direction orthogonally intersecting the surface of the target (2); and a rear surface magnet (4) disposed on the rear surface side of the target (2) The rear surface magnet (4) has a non-ring-shaped first permanent magnet (4A) wherein the polarity thereof faces the same direction as the polarity of the outer circumferential magnet (3) and the magnetization direction of the rear surface magnet (4) is in the direction orthogonally intersecting the surface of the target (2).

La présente invention se rapporte à une source d'évaporation à l'arc, une vitesse de formation de film étant accrue par induction de lignes magnétiques en direction du substrat. La source d'évaporation à l'arc est pourvue : d'au moins un aimant circonférentiel externe (3), qui est disposé de telle sorte que l'aimant circonférentiel externe entoure la circonférence externe d'une cible (2) et que la direction de magnétisation de celui-ci soit dans la direction croisant orthogonalement la surface de la cible (2) ; et d'un aimant de surface arrière (4) disposé côté surface arrière de la cible (2). L'aimant de surface arrière (4) a un premier aimant permanent de forme non annulaire (4A), la polarité de celui-ci étant orientée dans la même direction que la polarité de l'aimant circonférentiel externe (3) et la direction de magnétisation de l'aimant de surface arrière (4) étant dans la direction croisant orthogonalement la surface de la cible (2).

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