Arc heater method for the production of single crystal silicon

Details Arc heater method for the production of single crystal silicon Arc heater method for the production of single crystal silicon

H - Electricity

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B

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H05B 6/30 (2006.01) B01D 17/09 (2006.01) B23K 26/00 (2006.01) C01B 33/027 (2006.01) C01B 33/03 (2006.01) C01B 33/033 (2006.01) C30B 11/12 (2006.01) C30B 13/00 (2006.01) C30B 15/02 (2006.01) C30B 15/06 (2006.01) C30B 15/08 (2006.01) H05B 7/18 (2006.01)

Patent

CA 1102886

ABSTRACT OF THE DISCLOSURE A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.

298112

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