G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 7/00 (2006.01) G06F 12/08 (2006.01) G06F 13/28 (2006.01)
Patent
CA 2079690
ABSTRACT An embodiment of the present invention is a 1,024 by 1,024 DRAM integrated with a 1,024 by one SRAM. The SRAM contents can be directly addressed by external memory accesses and will service data transfers much faster than the DRAM could. The SRAM carries 64 lines of 16-bits of DRAM data. When an external write or read addresses a line of DRAM not in the SRAM, the SRAM flushes a line to update a previously cached line of DRAM, and then downloads a line of DRAM that contains a currently requested data bit.
Smart & Biggar
Standard Microsystems Corporation
Wanlass Frank M.
LandOfFree
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