Arrangement and method for selective electrochemical etching

Details Arrangement and method for selective electrochemical etching Arrangement and method for selective electrochemical etching

C - Chemistry, Metallurgy

25

F

204/117, 204/85

C25F 3/02 (2006.01) C25F 3/14 (2006.01) C25F 7/00 (2006.01) H01L 21/3063 (2006.01)

Patent

CA 1148111

ABSTRACT An apparatus for selective electrochemical etching, and an electrochemical etching process making use of this arrangement is described. The apparatus comprises a cur- rent supply, a cathode, means for making a workpiece into an anode, and means for covering the surface to be etched with an electrolyte. The current supply and the means for making an anode are designed in such a manner that two potentials are applied to the workpiece, one of which is at least as positive as the cathode potential, and the other more positive than the cathode potential. Where it is desired to etch N-doped silicon the apparatus also includes a lamp with a high light percentage in the near infrared range for irradiating the surface to be etched. GE9-78-026

348728

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