Arrangement for generating a plasma by means of cathode...

C - Chemistry – Metallurgy – 23 – C

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C23C 14/28 (2006.01) C23C 14/35 (2006.01) H01J 37/32 (2006.01) H01J 37/34 (2006.01)

Patent

CA 2092599

Abstract Title: Arrangement for generating a plasma by means of cathode sputtering and microwave irradiation The invention relates to an arrangement for generating a plasma by means of cathode sputtering and microwave irradiation. Herein the dc and/or ac voltage (10) of a magnetron is connected to the cathode (9) and a microwave is irradiated into the region between the cathode (9) and a substrate (5). The irradiation of the microwave takes place in the region of the magnetic field (22, 23) of the magnetron wherein the magnetic field and the microwave are layed out so that an electron cyclotron resonance develops and the microwave is absorbed in the plasma. (Fig. 1).

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