Array structural design of magnetoresistive random access...

Details Array structural design of magnetoresistive random access... Array structural design of magnetoresistive random access...

G - Physics

11

C

G11C 11/16 (2006.01)

Patent

CA 2719700

Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are dis-closed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.

L'invention concerne des cellules binaires de mémoires vives magnétiques à couple de transfert de spin (STT-MRAM). Les cellules binaires contiennent une ligne source formée dans un premier plan et une ligne binaire formée dans un second plan. La ligne binaire a un axe longitudinal qui est parallèle à un axe longitudinal de la ligne source, et la ligne source chevauche au moins une partie de la ligne binaire.

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