Arsenate dopant compounds

Details Arsenate dopant compounds Arsenate dopant compounds

H - Electricity

01

L

148/3

H01L 21/223 (2006.01) H01L 21/22 (2006.01)

Patent

CA 1248855

NOVEL ARSENATE DOPANT COMPOUNDS ABSTRACT New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500-1400°C to release As205, As203 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.

456083

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