Article comprising organic thin film transistors

Details Article comprising organic thin film transistors Article comprising organic thin film transistors

H - Electricity

01

L

H01L 29/786 (2006.01) G11C 13/02 (2006.01) H01L 51/30 (2006.01) G09G 3/32 (2006.01) G09G 3/36 (2006.01)

Patent

CA 2164357

Articles according to an embodiment of the invention comprise an improved organic thin film transistor (TFT) that can have substantially higher source/drain current on/off ratio than conventional organic TFTs. An exemplary TFT (20) according to the invention comprises, in addition to a p-type first organic material layer (16) (e.g., .alpha.-6T), an n-type second organic material layer (21) (e.g., Alq) in contact with the first material layer. TFTs according to the invention can be advantageously used in, for instance, active liquid crystal displays and electronic memories, and a preferred embodiment is expected to find wide use in complementary circuits. The preferred embodiments are organic TFTs that can be either n-channel or p-channel transistors, depending on biasing conditions. In aspecific embodiment the transistor comprises a 15 nm thick layer of .alpha.-6T (115) with a 40 nm thick layer of C 60 thereon (116). The latter was protected againstdegradation by the ambient by means of an appropriate electrically inert layer.

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