C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
149/6
C23F 1/04 (2006.01) B23P 15/24 (2006.01) C23F 1/02 (2006.01)
Patent
CA 1240596
ABSTRACT An improved etching technique for metal that permits an etch pattern having a plurality of etch depths to be obtained involves providing a first etch resistant coating on a surface such that a first region of the surface remains uncoated. The surface then is etched with an etching solution. A second etch resistant coating is applied such that a second region of the surface remains uncoated. The surface is etched again with an etching solution. At least one of each of the first and second regions overlap each other so that the surface is double etched in the overlapping area.
461869
Craigave Pty. Ltd.
Sim & Mcburney
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