Artificial semiconductor electron amplifying element

Details Artificial semiconductor electron amplifying element Artificial semiconductor electron amplifying element

H - Electricity

01

L

356/178

H01L 45/00 (2006.01) H01L 29/15 (2006.01) H01L 29/76 (2006.01) H01L 29/88 (2006.01)

Patent

CA 1261074

Abstract of the Disclosure An electron amplifying element formed of three kinds of artificial semiconductor elements having thin film multi-layer structure each having different period or layer thickness and each formed of thin metal films interleaved with thin insulated films. The thickness of one of the semiconductors is arranged to be of the order of the mean free path of electrons.

498853

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