Atmospheric pressure chemical vapor deposition

Details Atmospheric pressure chemical vapor deposition Atmospheric pressure chemical vapor deposition

C - Chemistry, Metallurgy

23

C

C23C 16/453 (2006.01) C23C 16/06 (2006.01)

Patent

CA 2577304

A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

L'invention porte sur un procédé de revêtement d'un substrat à la pression atmosphérique. Ce procédé consiste à vaporiser une masse contrôlée de matériau semiconducteur sensiblement à la pression athmosphérique à l'intérieur d'un flux gazeux inerte chauffé afin de créer un mélange de fluides dont la température est supérieure à la température de condensation du matériau semiconducteur, à diriger le mélange de fluides sensiblement à la température atmosphérique sur le substrat dont la température est inférieure à la température de condensation du matériau semiconducteur, et à déposer une couche du matériau semiconducteur sur une surface du substrat.

Affiliated with

Also associated with

Rating

Atmospheric pressure chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atmospheric pressure chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atmospheric pressure chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1643456