Atmospheric pressure chemical vapor deposition

Details Atmospheric pressure chemical vapor deposition Atmospheric pressure chemical vapor deposition

C - Chemistry, Metallurgy

23

C

C23C 16/453 (2006.01) C23C 16/06 (2006.01)

Patent

CA 2577307

A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

L'invention concerne un procédé de revêtement d'un substrat à la pression atmosphérique, qui consiste à vaporiser une masse contrôlée d'un matériau semiconducteur à une pression sensiblement atmosphérique dans un courant de gaz inerte chauffé, à créer un mélange fluidique dont la température est supérieure à la température de condensation du matériau semiconducteur, à diriger le mélange fluidique à une pression sensiblement atmosphérique sur le substrat ayant une température inférieur à la température de condensation du matériau semiconducteur, et à déposer une couche du matériau semiconducteur sur une surface du substrat.

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