Automatic gain control of a single gate gaas fet amplifier

H - Electricity – 03 – F

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330/39

H03F 3/193 (2006.01) H03G 3/30 (2006.01)

Patent

CA 1186024

AUTOMATIC GAIN CONTROL OF A SINGLE GATE GaAs FEP AMPLIFIER . ABSTRACT OF THE DISCLOSURE RF preamplification with AGC is employed because of the wide range of signal levels to which the RF input section of a radio is sub- jected. A reduction in noise figure is obtained by using a single gate gallium arsenide field effect transistor (GaAs FEr) as the RF preampli fier and providing an AGC control signal to vary the gain of the RF preamplifier so that the subsequent circuits are not overloaded when high RF signal levels appear at the input. -11-

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