H - Electricity – 03 – F
Patent
H - Electricity
03
F
330/39
H03F 3/193 (2006.01) H03G 3/30 (2006.01)
Patent
CA 1186024
AUTOMATIC GAIN CONTROL OF A SINGLE GATE GaAs FEP AMPLIFIER . ABSTRACT OF THE DISCLOSURE RF preamplification with AGC is employed because of the wide range of signal levels to which the RF input section of a radio is sub- jected. A reduction in noise figure is obtained by using a single gate gallium arsenide field effect transistor (GaAs FEr) as the RF preampli fier and providing an AGC control signal to vary the gain of the RF preamplifier so that the subsequent circuits are not overloaded when high RF signal levels appear at the input. -11-
424548
Gte Automatic Electric Incorporated
R. William Wray & Associates
LandOfFree
Automatic gain control of a single gate gaas fet amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Automatic gain control of a single gate gaas fet amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Automatic gain control of a single gate gaas fet amplifier will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1219577