Avalanche diode structure with improved efficiency and a...

Details Avalanche diode structure with improved efficiency and a... Avalanche diode structure with improved efficiency and a...

H - Electricity

01

L

356/178, 356/53

H01L 29/08 (2006.01) H01L 29/864 (2006.01)

Patent

CA 1114521

Abstract of the disclosure In an avalanche diode of gallium arsenide, e.g. an IMPATT diode, the optimization of the coefficient of ionization by impact in the case of impacts initiated by holes when the electrical field propels the carriers along the axis 1 1 1 of the monocrystal, has been utilized. The structure comprises a substrate of Ga-As with two large faces perpendicular to the axis 1 1 1 and layers obtained by epitaxial growth from one of these large faces. Arrangements are made to ensure that the electrical field is as parallel as possible to this crys- talline axis. The improvement in efficiency is of the order of 20 %.

305802

Affiliated with

Also associated with

Rating

Avalanche diode structure with improved efficiency and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Avalanche diode structure with improved efficiency and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche diode structure with improved efficiency and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-572584