H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/24
H01L 29/161 (2006.01) H01L 27/14 (2006.01) H01L 29/12 (2006.01) H01L 29/34 (2006.01) H01L 31/107 (2006.01)
Patent
CA 1289233
AVALANCHE PHOTODIODE Abstract The disclosed invention as directed to a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention is characterized by a plurality of floating guard rings 54, 56 and 58 which are separate about a central region 50 and doped in the opposite high concentration from that of the multiplication region 46a in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact 52 of the photodiode; and, therefore, no direct contact with the current source. This structure results in an enhanced ava- lanche effect in the central region with limited edge break- down undesirable consequences. In addition to this struc- ture, an alternative embodiment suggest the use of both a floating ring and thin slab 48 before the central region 50, of a dimension slightly smaller than the smaller region and concentric with it to achieve an optimized central avalanche breakdown with reduced edge breakdown of the electric fields formed during reversed biasing of the APD (avalanche photo- diode).
587455
Smart & Biggar
The University Of Southern California
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