Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

H - Electricity

01

L

345/26

H01L 31/107 (2006.01)

Patent

CA 1261045

AVALANCHE PHOTODIODE AND A METHOD OF MAKING SAME Abstract of the Disclosure The invention is an improved avalanche photodiode having reduced electrical noise arising from spurious surface generation of charge carriers. The avalanche photodiode includes active and neighboring regions adjacent a first surface of a semiconductor body with a gap region therebetween and a channel extending a distance into the semiconductor body from a portion of the second opposed surface opposite the gap region. A P-N junction is formed between regions of opposite conductivity type including a portion thereof over the channel. Since the dopant concentration at the junction is less over the channel, the local avalanche gain over the channel is less, thereby reducing the noise contribution from carriers generated in the gap region.

516831

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