Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

H - Electricity

01

L

345/24

H01L 31/02 (2006.01) H01L 31/107 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1237511

SEMICONDUCTOR DEVICE FOR RECEIVING LIGHT ABSTRACT OF THE DISCLOSURE A semiconductor device for receiving light com- prising: a first semiconductor layer having a first conductivity type; a second semiconductor layer, contact- ing the first semiconductor layer, having a forbidden bandwidth larger than that of the first semiconductor layer and distributed so that the forbidden bandwidth has a maximum value at an intermediate position of the thickness direction and having a first conductivity type; and a third semiconductor region, contacting the second semiconductor layers, having a forbidden bandwidth smaller than that of the contact end portion between the semiconductor region and the second semiconductor layer and larger than that of the first semiconductor layer and having a second conductivity type; the semiconductor region which has the second conductivity type acting as a window layer through which incident light is transmitted.

439833

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