Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

H - Electricity

01

L

345/26

H01L 31/02 (2006.01) H01L 31/0352 (2006.01) H01L 31/107 (2006.01)

Patent

CA 2040767

ABSTRACT OF THE DISCLOSURE An avalanche photodiode includes an avalanche multiplication layer consisting of a superlattice multilayer structure in which a repeated thin multilayer of short-width well layers and short-width barrier layers is sandwiched between a well layer and a barrier layer. The width of the short-width well and barrier layers is preferably up to 100 .ANG. . In such a structure, an ionization rate of electrons in the avalanche multiplication layer increases, so that the avalanche photodiode has low-noise and high speed response performances.

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