Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

H - Electricity

01

L

H01L 31/107 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2341110

An avalanche photodiode (APD) of the present invention uses a distortion-compensated superlattice multiplication layer (103) for the superlattice multiplication layer. It also uses a multi-layered light-reflecting layer as the light-reflecting layer. This structure of the present invention makes it possible to reduce a layer thickness of the superlattice multiplication layer without decreasing an electron multiplication factor and increasing a dark current. Accordingly, the APD of the present invention shows high response and low operating voltage, while it also maintains low dark current, low noise and broad band at the same time.

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