Avalanche photodiode and a method of making same

Details Avalanche photodiode and a method of making same Avalanche photodiode and a method of making same

H - Electricity

01

L

345/24

H01L 27/14 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1262955

RCA 80,829 AVALANCHE PHOTODIODE AND A METHOD OF MAKING SAME Abstract of the Disclosure The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surface. This photodetector includes a light-absorptive region, an active region overlying the absorptive region and having a central zone which has a greater concentration of conductivity modifiers than the remainder of the active region. A-cap region overlies the first region, has the opposite conductivity type and extends a greater distance in the lateral direction than the central zone. The invention is also a method of forming this detector comprising the steps of forming a first region of the active region, embedding an excess concentration of conductivity modifiers into a portion thereof and then forming a second region of the active region on the first region. A cap region of opposite conductivity type is then formed over the active region. The cap region has a greater lateral extent than the portion containing the excess concentration of conductivity modifiers.

511819

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