Avalanche photodiode detector

Details Avalanche photodiode detector Avalanche photodiode detector

H - Electricity

03

K

328/114

H03K 17/14 (2006.01) G01J 1/44 (2006.01) H01L 31/02 (2006.01) H04B 10/158 (2006.01)

Patent

CA 1072187

A B S T R A C T Temperature regulation of an avalanche photodiode is obtained by internal beating, by passing a reverse current through the breakdown region of the photodiode, In operation, an empirically-derived, reverse bias potential, equal to the breakdown potential at the desired operating temperature, is applied; and when incident radiation is to be detected the reverse bias potential is temporarily lowered to an empirically- derived operating value.

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