H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/107 (2006.01) G01J 1/02 (2006.01) H01L 31/0232 (2006.01) H01L 31/0248 (2006.01) H01L 31/0304 (2006.01) H01L 31/0312 (2006.01) H01L 31/0352 (2006.01) H01L 31/06 (2006.01) H01L 31/062 (2006.01) H01L 31/113 (2006.01)
Patent
CA 2451295
An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate 110 having a first dopant; a first layer 111 having the first dopant, positioned on top of the substrate; a second layer 112 having a second dopant, positioned on top of the first layer; a third layer 114 having a second dopant, positioned on top of the second layer; a passivation layer (116, 122) for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer 124 for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes (118,120) for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.
Arthur Stephen D.
Brown Dale M.
Kretchmer James W.
Matocha Kevin S.
Sandvik Peter M.
Company General Electric
Craig Wilson And Company
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