Avalanche photodiode made by mesa etch process

Details Avalanche photodiode made by mesa etch process Avalanche photodiode made by mesa etch process

H - Electricity

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H01L 31/10 (2006.01) H01L 31/0352 (2006.01) H01L 31/107 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1256549

PROCESS FOR FABRICATING AN AVALANCHE PHOTODIODE AND AN AVALANCHE PHOTODIODE THUS-OBTAINED ABSTRACT OF THE DISCLOSURE Disclosed is an avalanche photodiode wherein a light absorption layer and a multiplication layer are first grown on a substrate. The multiplication layer is then mesa-etched and another semiconductor layer is second grown on the mesa-etched multiplication layer. A dopant having a conductivity opposite to that of the above layers is introduced from the top of the another semiconductor layer to form a doped region extending inside the mesa portion and a p-n junction is therefore formed inside the mesa-etched portion. This causes the distribution of multiplication in the active area to become uniform, since the rough surface of the top of the mesa-etched portion exists outside the multiplication region.

482350

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