Avalanche photodiode structure

Details Avalanche photodiode structure Avalanche photodiode structure

H - Electricity

01

L

345/24

H01L 31/107 (2006.01) H01L 21/223 (2006.01) H01L 31/028 (2006.01) H01L 31/0304 (2006.01)

Patent

CA 1331650

ABSTRACT An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapour is flowed over the APD layers. Hydrogen and group V precursors are passed simultaneously with the bis (cyclopentadienyl) magnesium vapour to prevent loss of group V elements from the surface of the device.

606774

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