Avanlanche photodiode

Details Avanlanche photodiode Avanlanche photodiode

H - Electricity

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H01L 31/10 (2006.01) H01L 29/201 (2006.01) H01L 31/00 (2006.01) H01L 31/0352 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1280196

AVALANCHE PHOTODIODE Abstract of the Disclosure The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surface. This photodetector includes a light-absorptive region, an active region overlying the absorptive region forming a heterojunction therebetween. The photodetector includes a central zone which has a greater concentration of conductivity modifiers than the remainder of the active region and is located in the active region extending into the absorptive region. A cap region overlies the active region and has the opposite conductivity type. The cap region extends a greater distance in the lateral direction than the central zone. A photodetector having a central zone extending across the heterojunction between the active region and light absorptive region have exhibited response times comparable with those of photodetectors having a quaternary layer located between the active region and the absorptive region. However, the photodetector of the present invention does not require the hard-to-grow quaternary layer.

542375

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