Back-contacted solar cells with integral conductive vias and...

H - Electricity – 01 – L

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H01L 31/05 (2006.01) H01L 31/04 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2530743

Methods of manufacturing back-contacted p-type semiconductor substrate solar cells (10) fabricated using a gradient-~driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias (18) connecting the n-type emitter layer (14) on the front side to n-type ohmic contacts (20) located on the back side, and back-contacted solar cells with integral n-type conductive vias, such as made by a gradient-driven solute transport process.

La présente invention se rapporte à des procédés de fabrication de cellules solaires (10) à substrat semi-conducteur de type p à contact arrière, qui consistent à faire appel à un processus de transport de soluté entraîné par gradient, tel que la thermomigration ou l'électromigration, pour créer des trous de raccordement conducteurs de type n (18) qui relient la couche émettrice (14) de type n située sur la face avant à des contacts ohmiques (20) de type n situés sur la face arrière. L'invention a également trait à des cellules solaires à contact arrière dotées de trous de raccordement conducteurs de type n solidaires, tels que celles produites par un processus de transport de soluté entraîné par gradient.

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