Back-illuminated photodiode with a wide bandgap cap layer

Details Back-illuminated photodiode with a wide bandgap cap layer Back-illuminated photodiode with a wide bandgap cap layer

H - Electricity

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345/27

H01L 31/10 (2006.01) H01L 31/105 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1225730

- 12 - BACK-ILLUMINATED PHOTODIODE WITH WIDE BANDGAP CAP LAYER Abstract In0.53Ga0.47As p-i-n photodiodes with room temperature dark currents as low as 0.1 nA at -10 V bias are realized by introducing a wide bandgap (e.g., quaternary InGaAsP) cap layer on the ternary InGaAs.

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