Back sealing of silicon wafers

Details Back sealing of silicon wafers Back sealing of silicon wafers

H - Electricity

01

L

356/179

H01L 21/22 (2006.01) H01L 21/314 (2006.01) H01L 21/322 (2006.01)

Patent

CA 1253263

-8- Abstract Sealing the backside of a semiconductor wafer prevents evaporation of the dopant (typically boron) when an epitaxial layer is grown on the front (active) side, thereby preventing autodoping of the epitaxial layer with excess dopant. The present technique deposits an oxide layer during the ramp-up of the furnace that also deposits the nitride cap, thereby avoiding an extra process step. It also avoids the higher temperatures required for the prior-art technique of growing the oxide layer, resulting in lower oxygen precipitation due to the capping process and a greater yield of usable wafers.

536216

Affiliated with

Also associated with

Rating

Back sealing of silicon wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Back sealing of silicon wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back sealing of silicon wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1274232