Backside gettering of silicon wafers

Details Backside gettering of silicon wafers Backside gettering of silicon wafers

H - Electricity

01

L

356/116

H01L 21/20 (2006.01) H01L 21/322 (2006.01) H01L 29/12 (2006.01)

Patent

CA 1223671

-0- BACKSIDE GETTERING OF SILICON WAFERS Abstract There is disclosed a process and the result- ing semiconductor wafer wherein the backside of the wafer has applied thereto a layer of polysilicon. Portions of this layer are exposed to an energy beam to recrystallize them into single crystal silicon fused to and extending from the underlying wafer. The recrystallized portions contact adjacent portions of the polysilicon layer, thereby providing a path for impurities migrating from the wafer to the polysilicon.

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