Baffle system for glow discharge deposition apparatus

Details Baffle system for glow discharge deposition apparatus Baffle system for glow discharge deposition apparatus

C - Chemistry, Metallurgy

23

C

204/96.01

C23C 16/44 (2006.01) C23C 16/54 (2006.01) F16J 15/40 (2006.01) H01J 37/32 (2006.01)

Patent

CA 1214751

Apparatus for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are intro- duced, the chambers being operatively connected by a gas gate. Inert gases introduced into a first one of the adjacent chambers are unidirectionally swept through the gas gate to minimize back diffu- sion of process gases from the other of the cham- bers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

436882

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