Ballistic heterojunction bipolar transistors

Details Ballistic heterojunction bipolar transistors Ballistic heterojunction bipolar transistors

H - Electricity

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L

356/185

H01L 29/72 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1213378

BALLISTIC HETEROJUNCTION BIPOLAR TRANSISTORS ABSTRACT OF THE DISCLOSURE A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons may be trans- ported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor. 18

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