Ballistic transport-type semiconductor device for detecting...

Details Ballistic transport-type semiconductor device for detecting... Ballistic transport-type semiconductor device for detecting...

H - Electricity

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356/158

H01L 21/30 (2006.01) H01L 29/40 (2006.01) H01L 29/76 (2006.01) H01L 29/772 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1177583

ABSTRACT OF THE DISCLOSURE BALLISTIC TRANSPORT-TYPE SEMICONDUCTOR DEVICE FOR DETECTING ELECTRONS AND PRODUCTION PROCESS FOR SUCH A DEVICE A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which, by novel means, a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal or produce a phase shift. To this effect, in a very thin monocrystalline gallium arsenide film, a certain number of cells is produced for this purpose and each of them comprising a cathode, a first grid electrode embedded in the semiconductor material, a second grid electrode and at least one anode electrode serving as a target for the ballistic electrons, whose beam is deflected as a function of the different polarizat- ions applied to the grid electrodes.

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