H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/53
H01L 29/16 (2006.01)
Patent
CA 1122720
Abstract of the Disclosure A bilateral electrically symmetrical tunnel device having a voltage dependent transfer coefficient is disclosed which provides a negative impedance characteristic in both its forward and reverse biased directions, which includes a heterostructure consisting of a first layer of GaSb1-yASy, a second layer of In1-xGaxAs, and a third layer of GaSb1-yASy. The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed.
332741
Esaki Leo
Sai-Halasz George A.
Aspila Kalevi P.
United States Government As Represented By The Secretary Of The
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