Bandgap tuning of semiconductor quantum well structures

Details Bandgap tuning of semiconductor quantum well structures Bandgap tuning of semiconductor quantum well structures

H - Electricity

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H01L 21/265 (2006.01) G02B 6/134 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01) H01L 21/22 (2006.01) H01L 21/324 (2006.01) H01L 31/02 (2006.01) H01L 31/0352 (2006.01) H01L 31/07 (2006.01) G02B 6/12 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2140619

A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

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