Bandgap voltage reference employing sub-surface current...

Details Bandgap voltage reference employing sub-surface current... Bandgap voltage reference employing sub-surface current...

G - Physics

05

F

328/199

G05F 1/46 (2006.01) G05F 3/30 (2006.01)

Patent

CA 1168318

Abstract: A bandgap voltage reference employing only subsurface currents which may be fabricated using a standard CMOS process. The reference includes first and second vertical bipolar transistors having common collectors formed in an integrated circuit substrate. A first resistor connects the emitter of the first transistor to ground potential. A second resistor connects the emitter of the second transistor to a reference node while a third resistor connects the reference node to ground. A differential amplifier has a positive input connected to the reference node, a negative input connected to the first transistor emitter and an output connected to the bases of the first and second transistors and also providing the reference voltage output. In a preferred form the output of the differential amplifier is buffered by a third transistor and coupled by a resistive divider to the first and second transistor bases so that the reference voltage may be selected at any scalar of the basic bandgap voltage.

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