Barrier-free, low-resistant electrical contact on iii- v...

Details Barrier-free, low-resistant electrical contact on iii- v... Barrier-free, low-resistant electrical contact on iii- v...

H - Electricity

01

L

356/172

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 23/482 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1152228

ABSTRACT OF THE DISCLOSURE A contact structure on indium-containing III-V semiconductor material is comprised of a four layer sequence consisting of an indium layer in direct contact with the semiconductor material, a zinc layer in contact with the indium layer, a chromium-nickel or chromium or palladium or platinum layer in contact with the zinc layer and a gold layer for external contacting with a lead. An exemplary embodiment of such contact structure exhibits specific contact resistance ranging between about 10-4 and 10-5 ohm ? cm2.

373873

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