Base resistance controlled mos gated thyristor with improved...

Details Base resistance controlled mos gated thyristor with improved... Base resistance controlled mos gated thyristor with improved...

H - Electricity

01

L

H01L 29/74 (2006.01) H01L 29/745 (2006.01) H01L 29/743 (1990.01)

Patent

CA 2133585

2133585 9322798 PCTABS00028 An inventive thyristor structure includes anode and cathode electrodes, with a diverter electrode being connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface and includes a regenerative portion (110) operatively coupled between the anode and cathode electrodes, with a non-regenerative portion (120) being operatively coupled between the anode and diverter electrodes. The regenerative portion includes adjacent first (170), second (180), third (200) and fourth regions (240) of alternating conductivity type arranged respectively in series between the cathode and anode electrodes, wherein the cathode electrode is in electrical contact with the first region and the anode electrode is in electrical contact with the fourth region.

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