Beam scanning method and apparatus for ion implantation

H - Electricity – 01 – J

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356/192

H01J 37/302 (2006.01) H01J 37/317 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1189198

- 25 - Abstract of the Disclosure Method of and apparatus for scanning a charged particle beam over a semiconductor water in a pres- cribed pattern. A triangular waveform,including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and pro- duces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is in- cremented so as to step the beam vertically up or down,

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