Bias circuit for fet

H - Electricity – 03 – F

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

328/200

H03F 1/30 (2006.01) H03F 3/16 (2006.01)

Patent

CA 1283177

6446-405 ABSTRACT A bias circuit for a transistor confines errors in oper- ating current to a narrow range over a wide range of threshold voltages VT and is feasible for installation in an integrated cir- cuit. The bias circuit has a resistor connected between two power supply terminals and supplying a voltage appearing at a first divi- sion point of the resistor to a first FET as a gate bias. A second division point is provided on the resistor and a second FET has its drain or source connected to the second division point. The gate voltage of the second FET is connected to a predetermined potential point.

515761

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Bias circuit for fet does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bias circuit for fet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bias circuit for fet will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1254156

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.