H - Electricity – 03 – F
Patent
H - Electricity
03
F
328/200
H03F 1/30 (2006.01) H03F 3/16 (2006.01)
Patent
CA 1283177
6446-405 ABSTRACT A bias circuit for a transistor confines errors in oper- ating current to a narrow range over a wide range of threshold voltages VT and is feasible for installation in an integrated cir- cuit. The bias circuit has a resistor connected between two power supply terminals and supplying a voltage appearing at a first divi- sion point of the resistor to a first FET as a gate bias. A second division point is provided on the resistor and a second FET has its drain or source connected to the second division point. The gate voltage of the second FET is connected to a predetermined potential point.
515761
Asazawa Hiroshi
Hashimoto Kazuya
Corporation Nec
Smart & Biggar
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