Biasing circuit for a field effect transistor

Details Biasing circuit for a field effect transistor Biasing circuit for a field effect transistor

H - Electricity

03

F

328/200, 323/4

H03F 3/193 (2006.01) H03F 1/30 (2006.01) H03F 3/60 (2006.01)

Patent

CA 1227545

ABSTRACT OF THE DISCLOSURE A circuit for biasing a field effect transistor using two voltages. With said circuit, the bias point of the transistor may be varied by varying the source bias voltage. At least one access electrode is polarized from a bias voltage through a first secondary transistor operating as saturable load. The gate of the main transistor and the gate of the saturable load are connected at two points of a divider bridge, supplied by the two bias voltages and comprising at least two resistors and a second secondary transistor. The gate-source voltage of said saturable load follows the gate-source voltage of said main transistor.

472092

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